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RF Power Field-Effect Transistor

300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

M/A-COM Products

RoHS Compliant

MRF151G

Part Status: Released

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

Guaranteed Performance at 175 MHz, 50 V:

• Output Power — 300 W

• Gain — 14 dB (16 dB Typ)

• Efficiency — 50%

• Low Thermal Resistance — 0.35°C/W

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

Description and Applications

Designed for broadband commercial and military

applications at frequencies to 175 MHz. The high

power, high gain and broadband performance of this

device makes possible solid state transmitters for

FM broadcast or TV channel frequency bands.

Package Outline

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MRF151G 1

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9 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

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Communication-concepts MRF151G Manual do Utilizador

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